circuit ? outline drawing dimension:mm t?? part of di ode bridge & thyristor ?? maximum ratings ? parameter ? symbol conditions max. rated value g unit ? average rectified output current io (av) ? 3-phase full wave rectified t c = 107 ?R??? non-biased for thyristor 200 a t c = 82 ?R??? biased for thyristor 200 ??? operating junction temperature range tjw 125 150 ???????R ??? tj 125 , can not be biased for thyristor -40 +150 ?? storage temperature range tstg -40 +125 ~F?R isolation voltage viso ??`g ac 1 g terminal to base, ac 1min. 2500 v ?? mounting torque ?` mounting f ????????????T greased ? 2.5 3.5 ? ? terminal ? 2.5 3.5 `?? gate terminal ? 1.2 1.6 thermal chara cteristics ? parameter ? symbol conditions ? maximum value g unit ?? thermal resistance r th(c-f) ??????g(????)?????????????T case to fin , total , greased 0.06 / `???(6 ) p art of diode bridge(6 dies) ?? maximum rat ing ? parameter ? symbol max.rated value g unit ??????R *1 repetitive peak reverse voltage v rrm 1600 v ???????R *1 non-repetitive peak reverse voltage v rsm 1700 v ? parameter ? symbol conditions max. rated value g unit ` *1 surge forward current i fsm 50hz ?? 1 ?????? half sine wave, 1p ulse, non-repetitive 2000 a \rge *1 i squared t i 2 t 2 10ms 20000 a 2 S? allowable operating frequency f 400 hz *1 1 ???? value per 1 arm 200 vg 1600 olts PGH200N16
`???(6 ) part of diode bridge(6 dies) ?? electrica l characteristics ? parameter ? symbol conditions ? maximum value g unit ?` *1 peak reverse current i rm tj = 125 , v rm = v rrm 20 m a ?`?R *1 peak forward voltage v fm tj = 25 , i fm = 200a 1.26 v ? thermal resistance r th(j-c) ??D???g(????) unction to case , total 0.06 / *1 1 ??? ? value per 1 arm. ?() part of thyristor(1 die) ?? maximum rat ing ? parameter ? symbol max.rated value g unit ??????R *2 repetitive peak off-state voltage v drm 1600 v ???????R *2 non-repetitive peak off-state voltage v dsm 1700 v *2 ?R??? can not be biased for thyristor ? parameter ? symbol conditions max. rated value g unit ` surge on-state current i sm 50hz ?? 1 ?????? half sine wave, 1p ulse, non-repetitive 4000 a \rg i squared t i 2 t 2 10ms 80000 a 2 R?N critical rate of rise of turned-on current di/dt v d = 2/3 v drm , i tm = 2 ? io, tj =125 i g = 300ma, di g /dt = 0.2a/ s 100 a/ s ?``p? peak gate power p gm 5 w ?`p? average gate power p g(av) 1 w ?`` peak gate current i gm 2 a ?``?R peak gate voltage v gm 10 v ?``?R peak gate reverse voltage v rgm 5 v ?? electrica l characteristics ? parameter ? symbol conditions ? maximum value g unit min ? typ max ?` peak off-state current i dm tj = 125 , v dm = v drm 50 ma ?`?R peak off-state voltage v tm tj = 25 , i tm = 200a 1.15 v ??` gate current to trigger i gt v d = 6 v, i t = 1a tj = 40 300 ma tj = 25 150 tj = 125 80 ??`?R gate voltage to trigger v gt v d = 6 v, i t = 1a tj = 40 5.0 v tj = 25 3.0 tj = 125 2.0 ???`?R gate non-trigger voltage v gd tj =125 , v d = 2/3 v drm 0.25 v R?R?N critical rate of rise of off-state voltage dv/dt tj =125 , v d = 2/3 v drm 500 v/ s `???rg turn-off time t q tj =125 , i tm = io, v d = 2/3 v drm dv/dt = 20v/ s, v r = 100v, \ di/dt = 20a/ s 150 s `??rg turn-on time t gt tj =25 , v d = 2/3 v drm , i t =3 ? i o i g = 300ma, di g /dt = 0.2a/ s 6 s
? parameter ? symbol conditions ? maximum value g unit min ? typ max Wrg delay time t d tj =25 , v d = 2/3 v drm , i t =3 ? i o i g = 300ma, di g /dt = 0.2a/ s 2 s ?rg rise time t r 4 s ? latching current i l tj =25 150 ma holding current i h tj =25 100 ma ? thermal resistance r th(j-c) ??`g junction to case 0.20 /w | approximate weight s ?
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